BUV21G transistor equivalent, npn silicon power transistor.
* High DC Current Gain:
hFE min = 20 at IC = 12 A
* Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
* Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
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Features
* High DC Current Gain:
hFE min = 20 at IC = 12 A
* Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
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